Northrop Grumman Unveils New GaN Chip for W-Band RF
Northrop Grumman has developed a new gallium nitride (GaN) chip designed for W-band radio frequency applications. Ready in under six months, it aims to enhance military radar and support future 5G/6G commercial networks. The chip was produced at their California facility through a US government-funded industry-academia partnership.
Key points
- Northrop Grumman has fabricated a new gallium nitride (GaN) chip for W-band radio frequency use.
- The chip was developed and is market-ready in under six months.
- It is intended to improve military radar systems for secure wireless data transmission via satellites.
- The technology also supports next-generation commercial 5G and 6G connectivity.
- Development occurred at Northrop Grumman's Redondo Beach facility through a project with the Microelectronics Commons California DREAMS hub, funded by the US government.
Aerospace and defense firm Northrop Grumman announced the development of a new gallium nitride (GaN) chip targeting W-band radio frequencies. The company states the chip achieves new performance standards and was made market-ready in less than six months.
The semiconductor is designed for both military and commercial applications. For defense, it is intended to enhance military radar systems, enabling secure and rapid wireless data transmission through satellites. Commercially, it is poised to support the advancement of 5G and 6G mobile network technologies.
The chip was manufactured at Northrop Grumman's semiconductor facility located in Redondo Beach, California. Its rapid development was facilitated by a collaboration within the Microelectronics Commons California DREAMS hub, a program supported by the U.S. Department of Defense's Office of the Under Secretary of War for Research and Engineering, emphasizing an industry-government-academia partnership.
Sources
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